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The performance of GaN/InGaN quantum well was simulated using ATLAS software (Silvaco International Inc.) In this work, we simulated a quantum well active region of InGaN with GaN barrier layers. Here, we studied the changes in luminous intensity by varying thickness of the well region and Indium mole fraction of InGaN quantum well. It is found that the luminous intensity decreased when the thickness...
Recent expansion in the demand for high performance applications require high performance devices. It can be achieved by utilizing features of the quantum well based heterostructures on metamorphic buffer. Based on this metamorphic technique two electronic devices, named high electron mobility transistors (MHEMTs) & heterojunction bipolar transistors (MHBTs) are the areas of interest now-a-days...
Optical measurement on an InxGa1-xN/GaN QW may have several interpretations considering the different fundamental parameters for InxGa1-xN and InN, which are still uncertain. Quantum mechanical computations show that the line width or full width at half maximum (FWHM) of the PL spectra may be used to reduce ambiguities of interpretation.
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