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A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si3N4 passivation layer, is mainly utilized to model the device. The simulation of...
The performance of GaN/InGaN quantum well was simulated using ATLAS software (Silvaco International Inc.) In this work, we simulated a quantum well active region of InGaN with GaN barrier layers. Here, we studied the changes in luminous intensity by varying thickness of the well region and Indium mole fraction of InGaN quantum well. It is found that the luminous intensity decreased when the thickness...
Band lineup is one of the most important parameters associated with carrier confinement in heterostructures. Relations for computing the band line-ups of AlxGa1-xN based heterostructures have been developed. The band positions for AlxGa1-xN/GaN heterointerfaces are calculated from the equations developed, which directly co-relate the positions of the bands with the strain at the interface. The strains...
Optical measurement on an InxGa1-xN/GaN QW may have several interpretations considering the different fundamental parameters for InxGa1-xN and InN, which are still uncertain. Quantum mechanical computations show that the line width or full width at half maximum (FWHM) of the PL spectra may be used to reduce ambiguities of interpretation.
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