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A strain-relaxed buffer (SRB) technology that produces close to fully relaxed In x Al 1–x As is reported. The In x Al 1–x As layer was linearly graded from x=0.05 to 0.21. The effect of growth temperature on strain relaxation and surface morphology of In x Al 1–x As layer was studied here. For the strain relaxation study, the residual strain of In ...
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