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This letter presents the device performance of scaled thin-film-Ge lateral PIN photodetectors integrated on a Si waveguide. The photodetectors are with closely spaced p+/n+ regions (0.8 mum) on a Ge region with short length (5-20 mum) and narrow width (2.4 mum). Though with a thin Ge layer (~220 nm including bottom SiGe buffer), light is evanescent-coupled from the Si waveguide effectively to the...
Tensile-strained Ge photodetector is realized on Si-substrate using novel SiSiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4 nA), responsivity (190 mA/W) and high speed (5 GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility.
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