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A monolithic W-band preamplified diode detector based on 0.1- mu m pseudomorphic AlGaAs-InGaAs-GaAs high-electron-mobility-transistor (HEMT) technology is discussed. This chip, consisting of a Schottky diode detector with a two-stage W-band low-noise amplifier (LNA), has a measured detector responsivity of 300 V/mW at 94 GHz and a tangential sensitivity of -62 dBm. This is the first reported monolithic...
A monolithic W-band three-stage low-noise amplifier (LNA) based on 0.1- mu m pseudomorphic (PM) InAlAs/InGaAs/InP high-electron-mobility transistors (HEMTs) has been developed. This LNA has demonstrated a noise figure of 4.3 dB and an associated small-signal gain of 19 dB at 100 GHz with a low DC power consumption of 20 mW. This demonstrates the potential of InP HEMT technology for higher millimeter-wave...
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