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The paper presents radiation tolerance of the transistor TEG (TrTEG5) test structure fabricated in 200 nm fully depleted silicon on insulator technology dedicated to production of SOI detectors. The chip was irradiated with 60Cobalt gamma-ray source to total dose of 1.175 kGy at a rate of 67.8 Gy/h. During irradiation, current-voltage characteristics of seventeen different transistors were measured...
Monolithic active pixel detectors fabricated in SOI (silicon on insulator) technology are novel sensors of ionizing radiation which exploit SOI substrates for the integration of readout electronics with a pixel detector. The fully-depleted sensing diode is manufactured under the SOI buried oxide (BOX) in the volume of the `handle wafer', while readout circuitry occupies the upper silicon SOI `device...
Wymagania stawiane przez kolaborację SUCIMA, dotyczące monitorowania natężenia i profilu wiązki dla hadronoterapii, oraz potrzeby szybkiego pomiaru dawki promieniowania przy wykorzystaniu detektorów monolitycznych z aktywnymi komórkami (MAPS) przyczyniły się do zaprojektowania specjalizowanego systemu akwizycji danych (DAQ SUCIMA—IMAGER). Hadronoterapia jest zaawansowaną techniką leczenia nowotworów...
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