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We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 mum range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50 times 1250 mum2 broad area Fabry-Perot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength...
In x Ga 1 − x As (x ⩾ 0.57) thin layers were grown on GaAs by molecular beam epitaxy using an InAlAs graded buffer. Surface roughness of the graded buffer decreased with reduced buffer thickness and growth temperature. The InGaAs layers grown on a graded buffer revealed a larger tilting angle, a higher residual strain and electron mobility than those grown directly on GaAs. Increasing...
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