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The results of study of minority carrier lifetime in p-type and n-type InGaAs double heterostructures (DH) and thermophotovoltaic (TPV) cells with InPAs step-graded buffer layers grown on InP substrates are summarized. The active layer carrier concentration was varied in the range from 1015 to 1018 cm-3. The carrier lifetime constants were determined from photoluminescence (PL) transient and frequency...
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