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The intrinsic deep donor level, known as EL2, is responsible for semi-insulating behavior of undoped GaAs. EL2 is the most extensively studied point defect in GaAs. The most important property related to EL2 is the metastability under sub-bandgap light exposure at low temperature. The microscopic origin of EL2 and its photo-induced metastability is still under debate. We present an experimental investigation...
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