The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
We proposed a method to realize the fine frequency-tuning step using tiny capacitors instead of MIM capacitors for a digitally controlled oscillator (DCO). The tiny capacitors are realized by the coplanar transmission lines in a 6 metal layers (M6) foundry of 0.18 um CMOS technology. These transmission line based capacitors are designed by using electro-magnetic field simulator, and co-designed by...
We systematically study the strain effects on high-field carrier velocity (v) in (100) and (110) short-channel n/pFETs by means of substrate bending experiment. v and Idsat increase by strain is determined not only by low-field mobility (??) enhancement (????/??) but also by the modulation of saturation velocity (vsat). It is found that vsat increases more by strain in smaller-????/?? devices. The...
This paper presents a design methodology and verification of a 2/5 GHz dual band digitally-controlled oscillator (DCO). The presented DCO employed two spiral inductors and a switching transistor between them to operate at two bands of frequency. The switch is controlled by a digital signal so that shifting from one band of frequency to another to control the operation of spiral inductors needs no...
A digital-controlled oscillator (DCO) employing on-chip coplanar waveguide (CPW) resonator is proposed for 5 GHz-band wireless communication applications. A 10 bit DCO using on-chip designed, fabricated and tested. By comparing the measured results on the fabricated chip in 0.18 mum CMOS technology, it has noted that the proposed DCO employing on-chip CPW resonator is smaller in size and frequency-tuning...
In this paper, the first systematic study of Vth variations (sigmaVth) and Idsat variations (sigmaIdsat) in (110) n/pMOSFETs is presented. sigmaVth in (110) n/pFETs with high channel dose are larger than (100) n/pFETs. It is found that the variations of B ion channeling, B-induced interface traps, and As-induced interface fixed charges enhance sigmaVth in (110) n/pFETs. Steep B profile and moderate...
We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. Idsat of scaled (110) nFETs approaches (100) nFETs as a result of mu increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.