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Using the single ion hit Transient Ion Beam Induced Current (TIBIC), the transient current generated in n + p 6H–SiC diodes by 15MeV-oxygen (O 4+ ) microbeams was measured. The signal peak of the transient current increases, and the fall-time, which is defined as the decay time from 90% to 10% of the transient current, decreases with increasing applied reverse bias. The charge generated...
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