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In this study the possibility of the fabrication of CIGS layers from stacked precursors with selenization is examined. Different sequences of precursor layers and two different selenization methods were applied, in order to establish the optimal order of Cu, In and Ga layers in the precursor layer stack. The obtained CIGS films were studied by different micro- and surface analysis methods (TEM, SEM,...
One of the most important processes in Cu metallization for highly integrated circuits is to fabricate reliable diffusion barriers. Recently, thin films made of refractory metals and their compounds have been widely used in solid-state electronics as barriers because of their good electric properties, favourable thermal properties and chemical stability. Thermal stability of Tantalum (Ta) and Tantalum-oxide...
Elastic peak EPES-REELS spectra have been measured on polySi, aGe, GaAs, GaP, InSb and InAs samples for primary energies E=0.2-5keV, using the ESA 31 HSA spectrometer. The investigated specimens exhibit plasmon dominated loss spectra. We applied two approaches to separate surface and bulk plasmons. Firstly the normalized K(E,E L )λ i (E) inelastic scattering spectra, deduced from REELS...
The recoil effect on quasi-elastic scattering of electrons has been described by Boersch. The Rutherford type scattering on the nucleus produces a shift of the elastic peak maximum of ΔE em , proportional to 1/M (atomic mass) and electron energy. Laser et al. studied the recoil effect for exact calibration of the energy scale for XPS. The other effect is broadening of the elastic peak...
Electrons scattered elastically by the atomic nuclei suffer Rutherford-type recoil losses. This results in the shift ΔE em and width broadening ΔE eR of the elastic peak. This paper deals with the recoil broadening ΔE eR and the shape of the elastic peak, varying considerably for low Z (atomic number) elements and compounds. For the high Z region we assume, that...
Elastic peak electron spectroscopy (EPES) is confined to incoherent elastic scattering, appearing in the elastic peak intensity I e . Ion bombardment cleaning disorganizes the surface layer and might produce a component enrichment. EPES was used for the experimental determination of the inelastic mean free path of electrons on ion bombarded Si, GaAs, InP, InSb and GaSb crystals. Imperfect...
Correction for inelastically scattered electrons is important in determining intensities in elastic peak electron spectroscopy (EPES), e.g. for obtaining information on inelastic mean free paths in the material, relevant parameters in quantitative applications of electron spectroscopy. The spectral shape of electron energy loss spectra depends more strongly on the spectrometer function in the elastic...
Tin oxide pattern generation by laser deposition from SnCl 4 · 5H 2 O in isopropanol is reported. Smooth, even stripes of thicknesses ranging from 20 to 120 nm with sharp, well defined edges and cross-section are deposited by scanning Ar + laser beam (λ = 514.5 nm) focused onto the substrate—solution interface with a constant speed of 1 mm s −1 . The linewidth linearly...
The IMFP of electrons is a fundamental material parameter of surface analysis by AES, XPS, EPES and EELS. In surface analysis calculated IMFP values are used. Their experimental determination is rather difficult. The IMFP of amorphous Ge and polycrystalline Si was determined by comparing the elastic peak intensity ratios with electrolytic Ni reference sample of 1 nm surface roughness, achieved by...
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