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Cu 2 ZnSnS 4 films were deposited on glass substrates by the use of a printing technique. A series of different precursor materials was synthesized by a soft-chemistry route. Suspensions were prepared with or without the addition of a polymeric binder. Precursor films were printed and subjected to different thermal treatments in sulfur containing atmosphere. Parameters such as precursor...
Homogeneous layers of amorphous oxides of Cu–In, Cu–In–Ga were deposited by a sol–gel method. Selenization, sulfurization and sequential selenization+sulfurization treatments were performed with elemental S and Se, respectively. Adherent pinhole-free layers were observed by scanning electron microscopy. X-ray diffraction indicated increased gallium incorporation in selenized in comparison with sulfurized...
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