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This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p+/n/n+ junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode...
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