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In this paper is reported a systematic study of the effect of dose rate (ion beam current) on ion implanted impurity profiles in single-crystal silicon. A close examination of the effect of dose rate on as-implanted profiles reveals that for both boron and arsenic implantation, for beam currents ranging from 0.4 mA to 12 mA, dose rate has a small but clearly observable effect on channeling tails with...
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