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We present a full band investigation of electron-phonon interaction in Graphene NanoRibbons (GNRs) by exploiting a tight-binding description within the deformation potential approximation. We show that a full band approach is required to obtain accurate results: mobility as high as 800 cm2/Vs at room temperature can be achieved for 1 nm-wide ribbons, more than one order of magnitude higher than that...
We present an investigation of the main mechanisms which limit mobility in GNR-FETs, by means of atomistic simulations based on the NEGF formalism. In particular, we focus on i) line edge roughness (LER), ii) single defects; iii) ionized impurities, iv) acoustic and optical phonons. Results show that the effect of ionized impurities is negligible, while phonons, LER and defects largely limits carrier...
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