The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
For telecommunications applications of highly-integrated silicon-based photonic devices, we have developed a silicon-germanium-silica monolithic photonic integration platform, on which high-performance silica-based passive devices and compact, high-speed silicon-based dynamic/active devices can be monolithically integrated.
An electrically driven photonic-crystal nanocavity laser with a buried heterostructure exhibits a record low threshold current of 14 µA at 25°C. High-temperature operation up to 95°C is achieved by using the InGaAlAs-based multiple-quantum-well active region.
Linewidth of buried heterostructure photonic crystal nanolaser are studied in terms of output power. We report a linewidth of 143.5 MHz and it is the narrowest linewidth ever reported for photonic crystal based lasers.
We propose and investigate a novel type of waveguide polarization converter, which is particularly suited for monolithic integration in InP photonic integrated circuits. Efficient mode conversion with 0.4-dB loss and 16.6-dB extinction is demonstrated numerically.
We demonstrate a wavelength-tunable all-optical flip-flop (AOFF) based on a multimode-interference (MMI) bistable laser diode (BLD) with distributed Bragg reflectors (DBRs). The wavelength tuning can be achieved by the band-filling effect and the free-carrier plasma effect with carrier injections to the DBRs. The tuning range of 3.1 nm will enable flexible and reconfigurable design of future photonic...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.