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We report an increase in oscillation frequency of room-temperature terahertz oscillators using AIAs/InGaAs resonant tunneling diodes (RTDs) with optimized collector spacer thickness. Because of the trade-off relation between the capacitance and electron transit time for the spacer thickness, an optimum thickness exists in terms of the oscillation frequency. The highest frequency in this experiment...
Although the direct-modulation frequency in a resonant-tunneling-diode oscillator increases by reducing the metal-insulator-metal capacitance, the output power degrades simultaneously. We figured out this mechanism using an equivalent circuit model. Based on this result, a novel structure was proposed and fabricated, and terahertz oscillation without degradation in output power was obtained.
We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680–770 GHz with the RTD areas of 1–1.5 square microns. Higher frequency will be possible by reducing the RTD area.
This paper presents a single-phase grid connected inverter with a power decoupling circuit. In the single-phase grid connected inverter, it is well known that a power pulsation with twice the grid frequency is contained in the input power. In a conventional inverter, electrolytic capacitors with large capacitance have been used in order to smooth the DC voltage. However, lifetime of those capacitors...
High performance 32 nm-node interconnect with ELK (Extremely Low-k, k=3D2.4) has been demonstrated. To suppress process damage and enlarge the via-line space with a wide lithography process margin, robust ELK film with a metal hard mask (MHM) self-aligned via process has been developed. It has accomplished both ultimate low capacitance wirings and high TDDB reliability between Cu lines with vias....
A fundamental oscillation of up to 831 GHz was observed at room temperature in GaInAs/AlAs resonant tunneling diodes integrated with planar slot antennas. The thickness of the collector spacer layer was optimized (20 nm) and the mesa area (<1 mum2) was reduced in order to reduce the resonant tunneling diode capacitance. Reduction in the negative differential conductance in the small mesa area was...
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