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In this work the physical and electrical properties of metal-insulator-semiconductor devices using an electrografted insulator were characterized, including breakdown voltage, flat band capacitance and effective trap density and compared with reference thermal oxide layers. In addition, direct Cu plating on ALD barrier and seed layer into high aspect ratio TSVs was demonstrated and characterized....
Silicon interposers with through-silicon vias (TSVs) will enable further miniaturization and reduction in power consumption for future electronic systems. The design and method of integration of the TSVs can have a significant effect on the interposer process complexity, yield, and reliability. This paper will compare two different process approaches for Si interposer fabrication. In one approach,...
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