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We found a new anomalous gate leakage current (AGLC) of ultra-thin gate-SiON, which may directly impact standby leakage and yield for 65 nm node and beyond. We have identified the AGLC mechanism and also developed gate-stack fabrication process as effective countermeasures. Reducing gate-SiON to less than 1.3 nm induces AGLC leading to reliability degradation in nFET. With relatively large Phosphorous...
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