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O-band InAs/InGaAs quantum-dot (QD) laser-diode has been successfully demonstrated by using sandwiched sub-nano separator (SSNS) structures on GaAs. Improvement of crystal-qualities and enhancement of luminescence intensities were attained for the QD laser by SSNS technique.
The photochemical etching method has been performed on n-type Si(111) wafer with a resitivity of 4.2 kΩ cm, in a mixture of HF and H 2 O 2 , under He-Ne laser (633 nm) irradiation. The morphology of the porous films grown after exposure to a He-Ne laser at normal incidence were analysed by scanning electron microscopy (SEM). The results show that the films obtained are porous. Furthermore,...
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