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A thin Ag film was formed on an Si(100) substrate at 200 o C in UHV, and the Ag film resistance was measured up to a 15-nm thickness by the four-terminal method. The same measurement was performed using an H terminated Si(100) substrate, where measurements were carried out at 200 o C. In the case of the Si/Ag system, the resistance change showed a regular oscillation period for every...
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