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The total ionization dose effects and the single event effects in a 0.25 mum Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8times1012 proton/cm2. The results indicate that this process is radiation tolerant.
A 0.25 μm CMOS serializer ASIC, designed using radiation tolerant layout practice, was exposed to proton beam at various flux levels and accumulated fluence over 1.9times1015 protons/cm2 (100 Mrad (Si)). The ASIC survived this total ionizing dose (TID) with no degradation in function. Single event effect (SEE) cross-sections are also calculated.
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