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InAs/InP QDs broadband LED more than 450 nm spectrum width was successfully demonstrated. The broadband spectrum was obtained from the height controlled double-cap procedure and strain controlled buffer layer fabricated by the selective MOVPE technique.
More than 400 nm spectrum width LED was obtained in the InAs QDs array waveguide using height changed QDs during double-cap procedure and strain controlled buffer in 3 layered QDs.
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