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This paper demonstrates an integrated two-stage 1.95 GHz UMTS/W-CDMA handset RF reconfigurable power amplifier (PA) implemented in a 0.25mum SiGe BiCMOS technology from ST Microelectronics. By acting on bias circuits, a dynamic control of 1 dB compression point (CP1) and power gain of the structure is realized, according to input signal level. Thus, the power added efficiency (PAE) is improved at...
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