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Electron mobility on (100) and (110) planar FETs and SOI FinFETs was evaluated. It is experimentally demonstrated that the (110) sidewall of FinFETs does not present a drawback in terms of electron mobility - contrary to results obtained on (110) planar MOSFETs. This is comprehensively explained by a combination of first principles and empirical approach closely matching the experimental data.
A mechanism of degradation and breakdown in high-k/metal gate transistors was investigated. Based on the electrical test, physical analysis, and modeling results, we propose that the breakdown path formation/evolution in the interfacial SiO2 layer is associated with the growth of an oxygen-deficient filament facilitated by the grain boundaries of the overlaying high-k film. The model allows reproducing...
The presented theoretical analysis of random telegraph signal (RTS) and 1/f noise data provides consistent interpretation of the measurement results allowing trap characteristics to be extracted and the atomic structure of oxide traps to be identified. We emphasize the critical role of the lattice structural relaxation associated with charge trapping/detrapping, which represents one of the major factors...
We present a comprehensive description of the processes contributing to the electron capture/emission by bulk oxide traps, which allows for interpretation of RTS and 1/f noise data and extraction of the trap characteristics. It is shown that the electron capture/emission times could be controlled by the trap structural relaxation (caused by the trapped electrons) rather than by the electron tunneling...
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