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We report on our recent results of terahertz oscillators with resonant tunneling diodes (RTDs) at room temperature. By a structure with high current density and small capacitance, a fundamental oscillation at 831 GHz was obtained in GaInAs/AlAs double-barrier RTDs integrated with slot antennas. A comparison with theoretical analysis shows a possibility of electron transition from the Γ to L bands...
An estimation algorithm of operational intentions in the machine operation is presented in this paper. State transition relation of intentions was formed using Self-Organizing Map (SOM) from the measured data of the operation and environmental variables with the reference intention sequence. Operational intention was estimated by stochastic computation using a Bayesian particle filter with the trained...
Room-temperature THz oscillators using resonant tunneling diodes are shown. Structures for short transit time are fabricated toward 1 THz fundamental oscillation. Oscillators with offset slot antenna and array configuration are demonstrated for high power. Bias-dependent frequency, spectral linewidth, and direct modulation are also reported.
We observed coherent power combination in 3-element oscillator array using resonant tunneling diodes coupled through planar circuits. In the array, a single peak at 293 GHz with the output power of 13 muW was observed.
We observed coherent power combination in 3- and 6-element oscillator array using resonant tunneling diodes coupled through planar circuits in sub-THz range. InGaAs/AlAs resonant tunneling diode oscillators with slot antennas are arranged collinearly on the same InP wafer, and coupled with each other through a metal-insulator-metal stub structure. In 3-element array, a single peak at 293 GHz with...
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