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Silicon based Flash memories is the mainstream of the current random access memory (RAM) technique. However, it is close to reach its physical limit for miniaturization. So a few kinds of new RAMs have been proposed such as magnetic RAM (MRAM) [1], phase-change RAM [2] and resistive RAM (RRAM) [3]. RRAM is investigated due to its potential of miniaturization and ultrahigh operation speed. An RRAM...
With the fast development of information storage, exploiting new concepts for dense, fast, and non-volatile random access memory with reduced energy consumption is a significant and challenging task. To realize this goal, electric-field control of magnetism is crucial. In this regard, multiferroic materials are important and have attracted much attention due to their interesting new physics and potentials...
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