The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The effect of gate metallization and gate shape on the reliability and RF performance of 100nm AlGaN/GaN HEMTs on SiC substrate for mm-wave applications has been investigated under on-state DC-stress tests. By replacing the gate metallization from NiPtAu to PtAu the median time to failure at Tch=209°C can be improved from 10h to more than 1000h. Replacing the PtAu T-gate by a spacer gate further reduces...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.