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The proposed stacked GaAs DCFL circuit structure can not only equalise a power supply voltage value (3-5 V) used in Si ICs, but can also reduce circuit current (30-50%) due to current sharing within a stacked circuit. A divide by 128/129 and 64/65 prescalar IC has been fabricated to confirm this concept.<<ETX>>
The letter presents a surface-emitting GaInAsP/InP injection laser with 7 ?m cavity length operating at 1.30 ?m of wavelength. The threshold was as low as 50 mA at 77 K. The device operated up to 140 K with one single longitudinal mode and small wavelength change (0.64 ?/degree). The near-field diameter was 9 ?m and the far-field angle (FWHM) was 9?. The polarisation was linear.
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