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In industrial applications, particularly in vacuum ultraviolet applications and low-energy electron detection systems, a periodic surface cleaning of the used photon/electron detectors is required to prevent the buildup of carbon contaminating layers [1-3]. Such applications can be found in synchrotron measurements, space payload equipment, next-generation extreme-ultraviolet (EUV) lithography and...
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and...
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