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Power semiconductor devices (MOSFET, IGBT, SIThy, and SOS) have been studied for applications in repetitive pulsed power generation. These switching devices are expected to be used in pulsed high-voltage modulators for accelerators and power supplies for pulsed atmospheric discharges. MOSFET and static-induction thyristor (SIThy) are investigated for their performance in high-voltage modulation at...
Summary form only given. Nanosecond repetitive pulsed high voltage generator is successfully developed for atmospheric pressure pulsed discharge applications. This generator employs an inductive energy storage scheme with SOS (semiconductor opening switch) at the output of generator to sharpen and multiply the output voltage at high repetition rate. The SOS is specially designed semiconductor diode...
Summary form only given. Repetitive pulsed high-voltage modulators have been developed for industrial applications. They have used the most up-to-date power semiconductor devices such as power MOSFETs, silicon carbide JFETs, static-induction thyristors (SIThy), and semiconductor opening switches (SOS). As a new kind of high-energy particle accelerator, induction synchrotron requires pulsed high-voltage...
Power semiconductor devices have been used in development of various pulsed power generators for industrial applications. A repetitive pulsed high-voltage modulator using power MOSFETs has been developed for accelerator applications. It is capable of high-speed switching of 2kV at repetition rate of 1 MHz. This modulator, operating in continuous mode at average power level of 30 kW, has played an...
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