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In this paper, the hetero-epitaxy of γ-Al2O3 films on Si (100) substrates by RF magnetron sputtering has been systematically studied. Crystal quality improves with growth temperature from 400°C to 700°C. The films sputtered with 4.5% extra O2 or on a Si substrate with a thin oxide show better crystal qualities. Low sputtering power such as 60W is essential to maintain good interfaces. Direct evidence...
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