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A Variability resilient 128kbit 6T SRAM with energy consumption of 4.4pJ/access, operating at 80MHz for wireless sensor applications is developed in 90nm LP CMOS. The techniques developed include novelty in the local architecture with local read/write assist circuitry. VDD/2 pre-charged short local bit-lines with local sense amplifier enables charge re-cycling and gated read buffers eliminates bit-line...
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