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We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
High-Sc-content ScAlN thin films have attracted significant attention because of their strong piezoelectricity. Instead of a co-sputtering system, a conventional RF-magnetron sputtering system was employed using a Sc-Al alloy metal target for deposition of ScAlN thin films. Highly c-axis-oriented ScAlN thin films with a Sc concentration of 32 at.% were obtained. We also demonstrate that a one-port...
We have fabricated novel supper-induced graphite nanoneedle field emitters and Si electron- transparent films for application to electron-beam- pumped light sources. The field emitters exhibited a stable electron emission of 10 muA at an average field of 6V/ mum. The 1.5-mum-thick Si electron-transparent film with an aperture ratio of 75% achieved an electron transmittance of about 60% at an acceleration...
The hydrogenated amorphous silicon films containing low hydrogen concentrations are fabricated using a triode deposition system. Introducing a mesh between a cathode and a substrate in a capacitively coupled parallel electrode plasma enhanced chemical vapour deposition system, the prepared films contain low hydrogen concentration (Si-H=4 at.%, Si-H/sub 2//spl Lt/5/spl times/10/sup 20/ cm/sup -3/)...
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