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Ru and RuO 2 thin films for advanced metal gate applications were deposited on 200mm SiO 2 /Si substrate by the novel deposition technique atomic vapor deposition (AVD™). AVD™ was carried out in an Aixtron Tricent™ system using liquid delivery of the Ru precursor.The creation of Ru- and RuO 2 -films is controlled by varying the O 2 flow and deposition temperature. Ru...
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