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A 3D silicon sensor fabricated at Stanford with electrodes penetrating throughout the entire silicon wafer and with active edges was tested in a 1.4T magnetic field with a 180GeV/c pion beam at the CERN SPS in May 2009. The device under test was bump-bonded to the ATLAS pixel FE-I3 readout electronics chip. Three readout electrodes were used to cover the 400μm long pixel side, this resulting in a...
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