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We have investigated 1/f noise properties of epitaxial NbN/AlN or MgO/NbN tunnel junctions grown on single-crystal MgO(100) substrates. The 1/f noise parameter η for the NbN/AlN/NbN junctions greatly increased with decreasing the critical current density J c , i.e. with increasing the barrier thickness. The result may be associated to the imperfection of epitaxial growth of the thick AlN barrier...
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