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We report a temperature independent subthreshold slope (SS) of ∼47 mV/dec at low temperature in a triple top gate graphene tunnel field-effect transistor (TFET). The outer gates are used to define the p and n-doped regions of the ∼9.4 nm wide graphene nanoribbon, while the middle gate is used to switch the device between the ON and OFF states. Due to the flexibility of electrostatic doping, the device...
The experimental study of interband quantum mechanical tunnelling in graphene nanoribbons is a major step to realizing graphene tunnelling-based field effect transistors (TFET). Here, we report the sharp switching behaviour observed in an electrostatically controlled graphene nanoribbon p-n junction in pn and np biasing. We demonstrate current modulation with a slope of 42 mV/dec over five order of...
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