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A discrete surface potential model which accurately reflects channel doping profile is proposed. The proposed model is an improvement from the previously proposed model in order to accurately calculate drain current in full bias region using the same mobility and velocity saturation models as TCAD. Since the proposed model is a kind of first-principal-compact-model without any unphysical fitting parameters,...
A surface potential model for bulk MOSFET which accurately reflects channel doping profile is proposed. Only physical parameters such as device structures and doping profiles are used in the proposed model. For the vertical direction to channel, the model consistently integrates both surface potential and arbitral channel doping profiles in Poisson equation by using HiSIM2 framework. For channel direction,...
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