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We present a fully-integrated SOI CMOS 22nm technology for a diverse array of high-performance applications including server microprocessors, memory controllers and ASICs. A pre-doped substrate enables scaling of this third generation of SOI deep-trench-based embedded DRAM for a dense high-performance memory hierarchy. Dual-Embedded stressor technology including SiGe and Si:C for improved carrier...
The eSiGe layout effect induced by PC-bounded or STI-bounded eSiGe shows impact on device performance and variability increase. For PC-bounded device, performance degradation could be explained by the mobility loss due to reducing eSiGe volume and less stress strength. For STI-bounded device, performance degradation varies, due to strong interaction between eSiGe fill morphology and device overlap...
The intrinsic FinFET device structure can provide an estimated 10-20% reduction in delay relative to planar FETs at the 22 nm technology node due to superior electrostatics. However, FinFETs are more prone to parasitic resistance and capacitance due to the thin body channel and 3-dimensional device architecture. Here we present strategies for minimizing FinFET parasitic resistance, and discuss overall...
The cost of state-of-the-art supercomputing resources makes each individual purchase a length and expensive process. Often each candidate architecture will need to be benchmarked using a variety of tools to assess likely performance. However, benchmarking alone only provides a limited insight into the suitability of each architecture for key codes and will give potentially misleading results when...
Power estimation and verification have become important aspects of System-on-Chip (SoC) design flows. However, rapid and effective power modeling and estimation technologies for complex SoC designs are not widely available. As a result, many SoC design teams focus the bulk of their efforts on using detailed low-level models to verify power consumption. While such models can accurately estimate power...
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