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A two-stage 12 GHz LNA has been realised as a lumped element MMIC on GaAs substrates using In/sub 0.25/Ga/sub 0.75/As channel PM-MODFETs. The gain is >17 dB and noise figure is <1.25 dB. Input (output) match is better than -21 DB (-14 qB). The MMIC design includes reactive feedback by source inductances and makes use of optimised gate widths for broad noise circles and easy impedance match.<<ETX>>
A broadband amplifier chip has been fabricated using enhancement/depletion quantum-well FETs with 0.3 mu m gate lengths. In amplifier mode with unmatched input and single ended output the chip exhibits 30 dB gain and 6.5 GHz bandwidth. Matching extends the bandwidth to 9.0 GHz. In mixer mode at 12 GHz input frequency and 1.5 GHz IF frequency the chip shows 11.5 dB conversion gain. The chip has a power...
A procedure is described to determine the carrier density profile in the channel of a FET by evaluating S-parameters measured over a broad frequency range. Applying this method to GaAs/AlGaAs heterostructures, a frequency dispersion of the gate capacitance has been found, which is attributed to a parasitic conducting channel.
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