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Inverted-structure high electron mobility transistors with insulated-gate structure, i.e. AlGaAs/GaAs/n-AlGaAs, have been successfully applied to E/D-type DCFL ring oscillators. High transconductance of 280 mS/mm was obtained at 77 K in an enhancement-mode FET with 0.8 ?m gate length. Gate leakage current was small enough even at a gate voltage of +1.4 V both at 300 K and 77 K, and a high logic swing...
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