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Buried-stripe optical waveguides have been fabricated in GaAs/AlGaAs multiquantum-well material by masked Si/sup +/ implantation followed by annealing at 750 degrees C to produce selective-area quantum well mixing. The waveguides were found to support both TE and TM modes with propagation losses of 33 and 56 dBcm/sup -1/, respectively, at a wavelength of 1.15 mu m.<<ETX>>
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