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Ge p- and n-MOSFETs with Al2O3/GeOx/Ge gate stack were fabricated and characterized using a novel sub-1 ns ultra-fast measurement system. Devices operation under the conditions, that applying Vg with the ultra-fast rise edge down to less than 1 ns are confirmed. It is found that the current degradation within the first 10 ns is much more significant than that from 100 ns to longer time due to the...
We present a 3.3kW on-vehicle battery charger (OBC) for plug-in hybrid electrical vehicles and battery electric vehicles. The OBC is developed with a semi-bridgeless front-end PFC boost converter followed by a ZVS full bridge DC-DC converter. The performance of the PFC boost is analyzed and measured using different switching power devices. The test data is measured in the same system, at the same...
Following a review of the key power-switch requirements and the fundamental limitations of silicon as a material, this paper describes the technical issues and the reasons that motivated the development of commercially available Schottky diodes and MOSFETs in SiC. In the second part, the paper analyzes the potential of GaN to enable further technical progress beyond the theoretical limit of Si and...
The proliferation of Switch-Mode Power Supplies (SMPS) has led to a significant size decrease in step-down transformers for PC power supplies, moving away from the traditional linear power supplies which are heavier and bulkier than their modern counterparts. Step-down transformers are becoming more and more redundant in AC-DC converters due to higher blocking voltages of MOSFET's and the need for...
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