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Since Cree, Inc.'s 2nd generation 4H-SiC MOSFETs were commercially released with a specific on-resistance (RON, SP) of 5 mΩ·cm2 for a 1200 V-rating in early 2013, we have further optimized the device design and fabrication processes as well as greatly expanded the voltage ratings from 900 V up to 15 kV for a much wider range of high-power, high-frequency, and high-voltage energy-conversion and transmission...
In this paper, we report our recently developed large area 4H-SiC n-IGBTs that have a chip size of 1 cm2 and an active conducting area of 0.37 cm2. A blocking voltage of 22.6 kV has been demonstrated with a leakage current of 9 μA at a gate bias of 0 V at room-temperature. This is the highest breakdown voltage of a single MOS-controlled semiconductor switch reported to date. To improve the conductivity...
A new 60 A, 4.5 kV SiC JBS diode is presented, and its performance is compared to a Si PiN diode used as the antiparallel diode for 4.5 kV Si IGBTs. The I-V, C-V, reverse recovery, and reverse leakage characteristics of both diode types are measured. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, double-pulse switching test...
4.5 kV 120 A SICGT with a chip size of 8 mm times 8 mm and a new high heat resistive resin capable of 400 degC operations were developed. The SICGT coated with the resin has a low leakage current of less than 5 times 106 A/cm2 at both 4.5 kV and 250 degC, a low VF of 5.0 V at 120 A, and short turn-on and turn-off times of 0.3 mus and 1.7 mus respectively. A SICGT module was built by mounting one SICGT...
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