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Blue-green InGaN/GaN multiple-quantum-well light emitting diodes with peak emission wavelength of 480 nm were grown on low extended defect density semipolar (1122) bulk GaN substrates by conventional metal organic chemical vapour deposition. The calculated external quantum efficiency and output power at a drive current of 20 mA under pulsed operations (10% duty cycle) were 18% and 9 mW, respectively...
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