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An efficient approach to engineering the Al2O3/GaN positive interface fixed charges (Qit+) by post-dielectric annealing in nitrogen is demonstrated. The remarkable reduction of interface fixed charges from 1.44×1013 to 3×1012 cm−2 was observed, which leads to a record high threshold voltage (VTH) of +7.6 V obtained in the Al2O3/GaN MOSFETs. The positive interface charges were proposed originating...
Scanning confocal microscopy is used to study blue-emitting Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) multi-quantum wells grown by metal-organic chemical vapor deposition under different growth conditions. Sub-micrometer scale spatial and spectral variation of photoluminescence (PL) has been observed. Spectrum measurement shows the PL peak in bright region is red-shifted comparing with...
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