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In this letter, we present a quantitative analysis of the influences caused by an electric field annealing on interface atom diffusion in a Cu/Ta/Si stack at a range of temperatures 450∼650 °C. The results indicate that the external electric field has a remarkably accelerated effect on Cu atom diffusion in the Ta layer and the failure of Ta as the diffusion barrier. The preexponent D0 and the activation...
A micro-manufacturing technology is presented which allows the direct forming of three-dimensional metallic microstructures. We replicate micro grid array structures on metallic foil surface. This investigation reveals that three-dimensional metallic microstructures have a high spatial resolution at the micron-level. Numerical simulation results show that the material deformation process is characterized...
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