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Saturation current-bandwidth product (SCBP), the key of figure of merit in high-speed and high-power photodiodes (PDs), is mainly limited by the tradeoff between carrier drift time in depletion layer and RC-limited bandwidth of conventional PDs. Here, we present a revolutionary photodiode structure: linear-cascade photodiodes (LCPDs), designed to further improve the SCBP performance. Our demonstrated...
We demonstrate linear cascade near-ballistic uni-traveling-carrier photodiodes. Compared with control (a single device), this novel structure exhibits significant improvement in bandwidth-efficiency and saturation-current-bandwidth products. Record-high saturation-current-bandwidth product ( > 6825 mA-GHz, 91GHz) under 50Ω loads can be achieved.
We demonstrated optoelectronic mixers, which are constructed from near-ballistic uni-traveling-carrier photodiodes and band-pass filters. By utilizing strong nonlinearity of electron ballistic-transport, such module achieves low-up-conversion-loss (4.3 dB) and wide-up-conversion-bandwidth (11 GHz) under high-optical-power injection (16.6 dBm) at 30 GHz.
An optoelectronic integrated circuit (OEIC) with flip-chip technology for 1.55- m wavelength application is demonstrated. The presented flip-chip OEIC comprises an InP chip and the carrier substrate. The InP chip consists of an evanescently coupled photodiode (ECPD), an InP/InGaAs heterojunction bipolar transistor (HBT) and bonding pads. The semi-insulating GaAs carrier consists of a coplanar waveguide,...
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